Image sensor including auto-focus pixels

A method of manufacturing a plurality of pixels, comprising:

• arranging a plurality of photo-detecting areas corresponding to each of the plurality of pixels including a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel on a bottom surface of a semiconductor substrate;
• disposing a lens layer on a top surface of the semiconductor substrate;
• disposing a first photoresist film on the lens layer such that a common pattern is formed on the first AF pixel and the second AF pixel;
• forming a first dummy lens by processing the first photoresist film;
• forming a first micro lens pattern by etching the lens layer based on the first dummy lens;
• disposing a second photoresist film on the first micro lens pattern;
• forming a second dummy lens by processing the second photoresist film;
• and
• forming a micro lens by etching the first micro lens pattern based on the second dummy lens.

A method of manufacturing a plurality of pixels, comprising:

• arranging a plurality of photo-detecting areas corresponding to each of the plurality of pixels including a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, and isolated from each other by a deep trench isolation portion;
• disposing an insulating layer and a plurality of color filters on the plurality of photo-detecting areas;
• disposing a lens layer on the plurality of color filters;
• disposing a first photoresist film on the lens layer;
• forming a first dummy lens by processing the first photoresist film;
• forming a first micro lens pattern by etching the lens layer based on the first dummy lens;
• disposing a second photoresist film corresponding to the first AF pixel and the second AF pixel on the first micro lens pattern;
• forming a second dummy lens by processing the second photoresist film;
• and
• forming a micro lens by etching the first micro lens pattern based on the second dummy lens.