Solid-state imaging element, method of manufacturing solid-state imaging element, and electronic equipment

A method of manufacturing a solid-state imaging element, comprising:

• a step of forming a trench on a surface on an opposite side of a light incident side of a semiconductor substrate;
• a step of filling the trench with a low absorption member up to given depth from a bottom of the trench;
• a step of forming an insulating film on a side surface of the trench from the given depth to an opening of the trench;
• a step of filling a remaining part of the trench with a conductive wall-like electrode;
• and
• a step of forming a wiring layer on a surface on the light incident side of the semiconductor substrate, wherein
• a wire formed in the wiring layer is connected to the wall-like electrode, and
• the low absorption member has a light absorption rate smaller than a light absorption rate of the wall-like electrode.

Electronic equipment, comprising:

• a solid-state imaging element;
• an optical system that captures incident light from a subject and forms an image on an imaging surface of the solid-state imaging element;
• and
• a signal processing circuit that performs processing on an output signal from the solid-state imaging element, wherein
• the solid-state imaging element includes:
• a semiconductor layer including a plurality of photoelectric conversion sections disposed in a matrix;
• and
• a separation region that separates the photoelectric conversion sections adjacent to each other in the semiconductor layer, and
• the separation region includes:
• a wall-like electrode disposed in a wall shape, a negative bias voltage being applied to the wall-like electrode;
• and
• a low absorption member disposed further on a light incident side than the wall-like electrode, the low absorption member having a light absorption rate smaller than a light absorption rate of the wall-like electrode.