Image sensor with stack structure and manufacturing method thereof

An image sensor with a stack structure, the image sensor comprising:

• a first semiconductor chip including a substrate and at least one wiring layer, the substrate including a pixel area, a peripheral area, and a back-side insulating layer, the at least one wiring layer on a lower surface of the substrate, the pixel area including a plurality of pixels, and the back-side insulating layer on an upper surface of the substrate;
• a second semiconductor chip coupled to a lower surface of the first semiconductor chip, the second semiconductor chip including a plurality of logic elements;
• the back-side insulating layer including a fence, a plurality of color filters, and a TiO2 layer, the fence and the plurality of color filters in the pixel area, the fence including a single insulating layer having a grid pattern, and each color filter of the plurality of color filters separated from each other by the fence;
• and
• a fence insulating layer on an I/O pad area and at least one through-via array area of the peripheral area, the fence insulating layer comprising a same material as the fence.

An image sensor with a stack structure, the image sensor comprising:

• a first semiconductor chip including a substrate and a wiring layer, the substrate including a pixel area, a peripheral area, and a back-side insulating layer, the wiring layer on a lower surface of the substrate, the pixel area including a plurality of pixels, and the back-side insulating layer on an upper surface of the substrate;
• and
• a second semiconductor chip coupled to a lower surface of the first semiconductor chip, the second semiconductor chip including a plurality of logic elements;
• the back-side insulating layer including a fence and a plurality of color filters in the pixel area, the fence having a grid pattern and the plurality of color filters separated from each other by the fence;
• the peripheral area comprising a shield area and a shield outer area, the shield area surrounding the pixel area;
• and
• a fence insulating layer in the shield outer area, the fence insulating layer comprising a same material as the fence.