Image sensor and method of manufacturing the same

An image sensor comprising:

• a substrate having a pixel group including a plurality of pixels;
• a plurality of photodiodes disposed in the substrate and respectively corresponding to the plurality of pixels;
• an element isolation film disposed between the plurality of photodiodes;
• an anti-reflection layer disposed on the plurality of photodiodes and the element isolation film;
• a plurality of color filters disposed on the anti-reflection layer;
• a fence pattern disposed between the plurality of color filters and in the anti-reflection layer;
• and
• micro lenses disposed on the plurality of color filters,
• wherein the fence pattern includes a first part, a second part, and a third part, wherein the first part is disposed in the color filter,
• wherein the second part is disposed in the anti-reflection layer, and
• wherein the third part is disposed in the anti-reflection layer and is disposed between the first part and the second part,
• the second part is disposed between upper and lower surfaces of the anti-reflection layer,
• the first part and the third part include a same material as each other, and
• the second part includes a material different from those of the first part and the third part.

A method of manufacturing an image sensor, the method comprising:

• forming a plurality of photodiodes in a substrate;
• forming an element isolation film between the plurality of photodiodes;
• forming a first anti-reflection layer on the plurality of photodiodes and the element isolation film;
• forming a second anti-reflection layer on the first anti-reflection layer;
• forming a first trench by patterning the second anti-reflection layer;
• forming a first layer of a fence pattern by providing a conductive material in the first trench;
• forming a third anti-reflection layer on the second anti-reflection layer;
• forming a second trench exposing the first layer by patterning the third anti-reflection layer;
• and
• forming a second layer of the fence pattern in the second trench, wherein the second layer protrudes beyond an upper surface of the third anti-reflection layer, and
• wherein the second layer of the fence pattern includes a material different from those of the first layer and the third anti-reflection layer.