Semiconductor device

A semiconductor device comprising:

• a first gate electrode;
• a first gate insulating layer above the first gate electrode;
• a first oxide semiconductor layer above the first gate insulating layer;
• a source electrode and a drain electrode connected to the first oxide semiconductor layer;
• a second gate insulating layer above the first oxide semiconductor layer;
• a second gate electrode above the second gate insulating layer;
• a first insulating layer above the second gate electrode;
• a second oxide semiconductor layer between the second gate insulating layer and the second gate electrode;
• a first aperture penetrating the first insulating layer and the second gate insulating layer, a part of the first aperture overlapping the second oxide semiconductor layer in a planar view;
• a first connecting electrode in the first aperture;
• a second aperture penetrating the first gate insulating layer;
• and
• a second connecting electrode in the second aperture,
• wherein
• the first connecting electrode is connected to the second gate electrode and the second connecting electrode, and
• the second connecting electrode is connected to the first gate electrode.