Semiconductor device

A semiconductor device comprising:

• a first capacitor located at a first height from one surface;
• and
• a second capacitor spaced apart from the first capacitor and located at a second height from the one surface, the second height being different from the first height,
• wherein each of the first and second capacitors includes a lower electrode, an upper electrode and a dielectric layer between the lower electrode and the upper electrode,
• wherein a selected one of the lower and upper electrodes includes:
• a first portion having a cylindrical shape including a closed lower surface and an opened upper surface;
• and
• a second portion vertically extended from the first portion of the selected one,
• wherein a selected another one of the lower and upper electrodes includes:
• a first portion having a bar shape extended into the first portion of the selected one;
• a second portion vertically extended from the first portion of the selected another one;
• and
• a third portion having a cylindrical shape including a closed upper surface and an opened lower surface between the first portion and the second portion in the selected another one and the third portion configured to surround the first portion of the selected one.