Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, the method comprising the steps of:

• preparing a semiconductor substrate of a first conductivity type having a first main surface and including a first region where an IGBT region is formed and a second region where a diode region is formed side by side in a first direction along the first main surface;
• forming a first resist mask having a first opening on the first main surface of the first region;
• implanting impurity ions of a first conductivity type from the first opening to form a carrier accumulation layer of a first conductivity type;
• implanting impurity ions of a second conductivity type from the first opening to form a base layer of a second conductivity type between the first main surface and the carrier accumulation layer;
• forming a second resist mask having a second opening on the first main surface of the second region;
• and
• implanting impurity ions of a second conductivity type from the second opening to form an anode layer of a second conductivity type from a position deeper from the first main surface than a depth at which the carrier accumulation layer is formed to the first main surface.