Semiconductor package and method of forming same

A semiconductor device comprising:

• an interconnect structure disposed over a semiconductor substrate;
• a first metal pad disposed over and electrically connected to the interconnect structure, the first metal pad comprising a first top major surface opposite the semiconductor substrate, the first top major surface being planar;
• a second metal pad disposed over and electrically connected to the interconnect structure, the second metal pad comprising:
• a second top major surface opposite the semiconductor substrate;
• a first recess in the second top major surface;
• and
• a protrusion extending from the second top major surface;
• and
• a dielectric layer disposed over and around lateral edges of the first metal pad and the second metal pad.

A semiconductor device, comprising:

• a first metal pad disposed over and electrically connected to an integrated circuit, a first topmost surface of the first metal pad being planar, the first topmost surface facing away from the integrated circuit;
• a second metal pad disposed over and electrically connected to the integrated circuit, a second topmost surface of the second metal pad being non-planar and comprising a protrusion, the second topmost surface facing away from the integrated circuit;
• a first dielectric layer disposed around the first metal pad and the second metal pad, the first dielectric layer being disposed over the first topmost surface and the second topmost surface;
• and
• a second dielectric layer disposed over the first dielectric layer, the second dielectric layer being in physical contact with the protrusion.