Semiconductor device structure with conductive bumps

A semiconductor device structure, comprising:

• a semiconductor substrate;
• a first conductive structure over the semiconductor substrate, wherein the first conductive structure has a first protruding portion extending towards the semiconductor substrate, and a top of the first conductive structure is wider than the first protruding portion;
• and
• a second conductive structure over the semiconductor substrate, wherein the second conductive structure is substantially as wide as the first conductive structure, the second conductive structure has a second protruding portion extending towards the semiconductor substrate, a top of the second conductive structure is wider than the second protruding portion, the second protruding portion is wider than the first protruding portion, and tops of the first protruding portion and the second protruding portion are substantially level with each other.

A semiconductor device structure, comprising:

• a semiconductor substrate;
• a first conductive structure over the semiconductor substrate, wherein the first conductive structure has a first protruding portion extending towards the semiconductor substrate, and a top of the first conductive structure is wider than the first protruding portion;
• and
• a second conductive structure over the semiconductor substrate, wherein the second conductive structure is substantially as wide as the first conductive structure, the second conductive structure has a second protruding portion extending towards the semiconductor substrate, a top of the second conductive structure is wider than the second protruding portion, the second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially aligned with each other.