Bonding pad, integrated circuit element, and integrated circuit device

A bonding pad of an integrated circuit element included in an integrated circuit device, the bonding pad comprising:

• a surface electrode layer having a first surface;
• a resistance layer having a second surface disposed at an interval from the first surface in a first direction orthogonal to the first surface, the second surface facing a side opposite to the first surface;
• a stress buffer layer disposed between the surface electrode layer and the resistance layer in the first direction;
• and
• a connecting member connecting the surface electrode layer and the stress buffer layer in the first direction and being in contact with each of the surface electrode layer and the stress buffer layer, wherein
• the stress buffer layer extends over the entire bonding pad in a direction orthogonal to the first direction,
• the connecting member includes an insulator that is in contact with the each of the surface electrode layer and the stress buffer layer in the first direction, and at least one plug that is in contact with the insulator in the direction orthogonal to the first direction and electrically connect the surface electrode layer and the stress buffer layer, and
• a thickness of the stress buffer layer in the first direction is larger than a thickness of the surface electrode layer in the first direction.