Semiconductor package and manufacturing method thereof

A semiconductor package comprising:

• a signal distribution structure (SDS) comprising a dielectric layer and a conductive layer, the signal distribution structure comprising a top SDS side and a bottom SDS side;
• a first semiconductor die comprising a first top die side and a first bottom die side, wherein:
• the first bottom die side is coupled to the top SDS side;
• and
• the first bottom die side comprises a die bond pad coupled to the conductive layer;
• a package attachment structure coupled to the bottom SDS side and electrically coupled to the die bond pad through the conductive layer;
• a first encapsulating material comprising a first top encapsulant side and a first bottom encapsulant side, wherein the first encapsulating material laterally surrounds the first semiconductor die and covers a portion of the top SDS side;
• and
• a second encapsulating material comprising a second top encapsulant side and a second bottom encapsulant side, wherein the second encapsulating material laterally surrounds the package attachment structure and covers a portion of the bottom SDS side.

A method of making a semiconductor package, the method comprising:

• providing a signal distribution structure (SDS) comprising a dielectric layer and a conductive layer, the signal distribution structure comprising a top SDS side and a bottom SDS side;
• providing a first semiconductor die comprising a first top die side and a first bottom die side, wherein:
• the first bottom die side is coupled to the top SDS side;
• and
• the first bottom die side comprises a die bond pad coupled to the conductive layer;
• providing a package attachment structure coupled to the bottom SDS side and electrically coupled to the die bond pad through the conductive layer;
• providing a first encapsulating material comprising a first top encapsulant side and a first bottom encapsulant side, wherein the first encapsulating material laterally surrounds the first semiconductor die and covers a portion of the top SDS side;
• and
• providing a second encapsulating material comprising a second top encapsulant side and a second bottom encapsulant side, wherein the second encapsulating material laterally surrounds the package attachment structure and covers a portion of the bottom SDS side.

A semiconductor package comprising:

• a signal distribution structure (SDS) comprising a dielectric layer and a conductive layer, the signal distribution structure comprising a top SDS side and a bottom SDS side;
• a semiconductor die comprising a top die side and a bottom die side, wherein:
• the bottom die side is coupled to the top SDS side;
• and
• the bottom die side comprises a die bond pad coupled to the conductive layer;
• a package attachment structure coupled to the bottom SDS side and electrically coupled to the die bond pad through the conductive layer;
• a first encapsulating material comprising a first top encapsulant side and a first bottom encapsulant side, wherein the first encapsulating material laterally surrounds the semiconductor die and covers a portion of the top SDS side;
• a second encapsulating material comprising a second top encapsulant side and a second bottom encapsulant side, wherein the second encapsulating material laterally surrounds the package attachment structure and covers a portion of the bottom SDS side;
• and
• a vertical interconnect comprising a top side and a bottom side, wherein the vertical interconnect extends through the first encapsulant material and is electrically connected to the conductive layer.