Methods for mechanical self-alignment and slip-resistance in bonding semiconductor substrates, and semiconductor devices comprising mechanical self-alignment structures

A semiconductor apparatus comprising:

• a first semiconductor substrate including a first dielectric surface having a first mechanical alignment structure with protrusions, each protrusion having a top and sides;
• a second semiconductor substrate including a second dielectric surface in contact with the first surface, the surface having a second mechanical alignment structure with grooves, each groove having sidewalls and a bottom, wherein the second mechanical alignment structure is a topographic inverse of the first mechanical alignment structure, so that the protrusions and grooves are inter-fitted;
• planar bonding regions between the first and second surface;
• and
• slanted bonding regions between the sides and sidewalls,
• wherein the protrusions comprise a dielectric material or electrically conductive pads, wherein the bottoms of the grooves comprise a dielectric material or electrically conductive pads, and
• wherein a pitch exists between the electrically conductive pads, the pitch measuring less than one-hundred fifty nanometers.

A semiconductor apparatus, comprising:

• a substrate including a dielectric surface at which is formed a plurality of mechanical alignment structures, each with a horizontal surface offset from the dielectric surface and side surfaces at an angle of thirty degrees, as measured from a line that is perpendicular to the dielectric surface,
• wherein the protrusions comprise a dielectric material or electrically conductive pads,
• wherein the bottoms of the grooves comprise a dielectric material or electrically conductive pads, and
• wherein a pitch between the plurality of mechanical alignment structures measures less than one-hundred fifty nanometers.