Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first interlayer insulating layer;
• a plurality of lower conductive lines spaced from each other by the first interlayer insulating layer;
• an etch stop layer disposed on the first interlayer insulating layer and a first lower conductive line of the lower conductive lines;
• a second interlayer insulating layer disposed on the etch stop layer;
• a via passing through the second interlayer insulating layer and the etch stop layer and contacting the first lower conductive line;
• and
• an upper conductive line disposed on the via,
• wherein the first lower conductive line has a protrusion protruding above an upper side of the first interlayer insulating layer,
• the etch stop layer includes a first etch stop layer in a curved shape in a cross-sectional view and a second etch stop layer disposed on the first etch stop layer and having a thickness variation, and
• a portion of the via is disposed above and does not pass through a portion of the first etch stop layer overlapping the first interlayer insulating layer between the plurality of lower conductive lines.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive line in a first interlayer insulating layer;
• recessing the first interlayer insulating layer to form a protrusion of the first conductive line protruding above an upper side of the first interlayer insulating layer;
• forming a first etch stop layer in a curved shape to cover the first interlayer insulating layer and the protrusion of the first conductive line;
• forming a second etch stop layer with a thickness variation on the first etch stop layer;
• and
• forming a via passing through the first etch stop layer and the second etch stop layer.