Semiconductor device structure with stacked conductive plugs and method for preparing the same
AssigneeNanya Technology Corporation
InventorYI-HSIEN CHOU
Life of this patent
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Abstract
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer. A top surface of the first conductive plug is greater than a bottom surface of the first conductive plug. The semiconductor device structure further includes a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug.
Claims7
A method for preparing a semiconductor device structure, comprising:
- forming a first dielectric layer over a semiconductor substrate;
- etching the first dielectric layer to form a first opening exposing the semiconductor substrate;
- forming recesses by removing portions of the first dielectric layer at top corners of the first opening;
- forming a first conductive plug in the first opening and the recesses;
- forming a second dielectric layer over the first dielectric layer;
- etching the second dielectric layer to form a second opening exposing the first conductive plug;
- and
- forming a second conductive plug in the second opening.
Dependencies are inferred from the claim text.