Integrated circuit device

An integrated circuit device, comprising:

• a lower insulating structure disposed over a substrate;
• a lower wiring structure that passes through the lower insulating structure in a vertical direction;
• an upper insulating structure disposed on the lower insulating structure;
• and
• an upper wiring structure that includes an upper metal plug that passes through the upper insulating structure in the vertical direction, and an upper conductive barrier structure that surrounds a sidewall and a lower surface of the upper metal plug,
• wherein the upper conductive barrier structure comprises:
• a first barrier portion that is arranged between the upper metal plug and the upper insulating structure and contacts each of the upper metal plug and the upper insulating structure, and that includes a plurality of metal nitride films and a plurality of metal films, wherein the plurality of metal films include different metals from each other;
• and
• a second barrier portion that is arranged between the upper metal plug and the lower wiring structure and contacts each of the upper metal plug and the lower wiring structure, wherein the second barrier portion has a different structure from the first barrier portion.

An integrated circuit device, comprising:

• a lower insulating structure disposed over a substrate;
• a lower wiring structure that passes through the lower insulating structure in a vertical direction;
• an upper insulating structure disposed on the lower insulating structure and the lower wiring structure and that includes an etch stop film and an interlayer dielectric that covers an upper surface of the etch stop film, wherein the etch stop film has a multilayered structure that includes a plurality of insulating films that include different materials from each other;
• and
• an upper wiring structure that includes an upper metal plug that passes through the upper insulating structure in the vertical direction, and an upper conductive barrier structure that surrounds a sidewall and a lower surface of the upper metal plug,
• wherein the upper conductive barrier structure comprises:
• a first multilayered film that extends along a first sidewall of the upper insulating structure and includes a first TaN film, an Ru film, and a second TaN film that are sequentially stacked in the stated order from the first sidewall of the upper insulating structure toward the upper metal plug, wherein the first sidewall faces the upper wiring structure;
• and
• a second multilayered film that is disposed over the first sidewall of the upper insulating structure and extends along the first multilayered film, and that is disposed on the lower wiring structure and extends along an upper surface of the lower wiring structure, wherein the second multilayered film is spaced apart from the first sidewall of the upper insulating structure with the first multilayered film interposed therebetween and includes a third TaN film and a Co film that are sequentially stacked in the stated order from each of a surface of the first multilayered film and the upper surface of the lower wiring structure toward the upper metal plug.