Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSeonhaeng LEE, Hyunggyun NOH, Sung-Mock HA
Life of this patent
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Abstract
A semiconductor device may include a substrate having a first surface and a second surface opposite to the first surface, a protection layer on the first surface of the substrate, metal layers in the substrate, extending in a first direction parallel to the first surface, and spaced apart from each other in a second direction perpendicular to the first surface, a via structure vertically penetrating the metal layers and the substrate, a circuit layer on the second surface of the substrate, and a connection terminal on a bottom surface of the circuit layer. Each of the metal layers may have a tetragonal or circular shape, when viewed in a plan view.
Claims20
A semiconductor device, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a protection layer on the first surface of the substrate;
- metal layers in the substrate, the metal layers extending in a first direction parallel to the first surface, the metal layers spaced apart from each other in a second direction perpendicular to the first surface;
- a via structure vertically penetrating the metal layers and the substrate;
- a circuit layer on the second surface of the substrate;
- and
- a connection terminal on a bottom surface of the circuit layer,
- wherein each of the metal layers has a tetragonal or circular shape, when viewed in a plan view.
A semiconductor device, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to the first surface;
- a circuit layer on the second surface of the semiconductor substrate;
- a connection terminal on a bottom surface of the circuit layer;
- a via structure vertically penetrating the semiconductor substrate;
- and
- metal layers penetrating the via structure in a first direction parallel to the first surface of the semiconductor substrate,
- wherein the metal layers are spaced apart from each other in a second direction perpendicular to the first surface of the semiconductor substrate, and
- wherein the metal layers comprise,
- first portions extending in the first direction to penetrate the via structure;
- and
- second portions extending in a third direction crossing the first direction and connecting opposite end portions of the first portions to each other.
A semiconductor device, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other;
- a circuit layer on the second surface of the semiconductor substrate;
- a connection terminal on a bottom surface of the circuit layer;
- a via structure vertically penetrating the semiconductor substrate;
- and
- metal layers protruding outward from the via structure,
- wherein the metal layers are spaced apart from each other in a direction perpendicular to the semiconductor substrate;
- wherein the via structure comprises,
- first vias separated from each other in a first direction parallel to the first surface of the semiconductor substrate,
- a second via provided between the first vias, and
- insulating layers interposed between the first vias and the second via, and
- wherein the metal layers are in contact with an outer side surface of each of the first vias.
Dependencies are inferred from the claim text.