Semiconductor device and vibrator device

A semiconductor device comprising:

• a semiconductor substrate including a first surface and a second surface having a front-back relation to the first surface, and having a first through hole formed to penetrate from the first surface to the second surface;
• a first insulating layer placed on the first surface, including a third surface at the semiconductor substrate side and a fourth surface having a front-back relation to the third surface, and having a second through hole formed in a position overlapping with the first through hole;
• a second insulating layer placed on the second surface and having a first opening portion formed in a position overlapping with the first through hole;
• a first conducting layer exposed from the second insulating layer by the first opening portion;
• an organic insulating layer placed on the fourth surface, a side surface of the second through hole, a side surface of the first through hole, a side surface of the first opening portion, and a surface of the first conducting layer, and having a second opening portion formed to overlap with the first opening portion;
• and
• a second conducting layer placed on a surface of the organic insulating layer placed on the fourth surface, the side surface of the second through hole, the side surface of the first through hole, the side surface of the first opening portion, and the surface of the first conducting layer and a surface of the first conducting layer exposed from the organic insulating layer by the second opening portion, wherein
• the side surface of the second through hole is a first tapered surface.