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US 2024/0258201 A1Published application
Semiconductor device with through vias of various shapes and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsEun Hye DO, Jong Hoon KIM
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Abstract
A semiconductor device is provided with differently-shaped conductive through-vias, having different-shape horizontal cross-sections. The cross-sectional shapes of the via include but are not limited to circular and ring shaped, which are cross sections that correspond to vias that are pillar shaped and tube-shaped respectively.
Claims20
A semiconductor device comprising:
- a substrate;
- and
- a first through via and a second through via which penetrate the substrate,
- wherein the first through via is substantially pillar-shaped;
- and
- wherein the second through via is substantially tube-shaped.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming first and second holes in a first surface of a substrate;
- and
- forming first and second through vias in the substrate by filling the first and the second holes with an electrically-conductive material;
- wherein the first hole is a substantially circular hole having a substantially round horizontal cross-sectional shape, and wherein the filled first hole is substantially pillar-shaped;
- and
- wherein the second hole is substantially tube-shaped, the horizontal cross section shape is substantially ring-shaped.
3 more elements
Dependencies are inferred from the claim text.