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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Shen LIN, Ren-Zheng LIAO, Hao-Tien KAN, Yung-Fong LU
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A semiconductor devices includes a substrate, a power grid structure, and a through via penetrating the substrate. The power grid structure includes: first and second rails extending along a first direction, a conductive wire, a third rail, a conductive via, and a connecting member. The conductive wire is between the first and second rails, and extends along the first direction. The third rail is below the first rail, the second rail and the conductive wire, and extends along a second direction perpendicular to the first direction. The conductive via is between and electrically couples the conductive wire to the third rail. The connecting member is between and electrically couples the first rail to the conductive wire. The through via extends through the substrate and along a third direction perpendicular to the first direction and the second direction. The through via is disposed on and coupled to the conductive wire.
A semiconductor device, comprising:
A semiconductor device, comprising:
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.