Methods and assemblies for cooling semiconductor devices using carbon allotropes

A semiconductor die comprising:

• a die body comprising a substrate, a device region over the substrate;
• and
• a semiconductor device formed in the device region;
• a first metal interconnect over a frontside surface of the device region;
• and
• a carbon allotrope layer that covers at least a portion of the frontside surface such that the carbon allotrope layer covers the semiconductor device and the first metal interconnect.

A method comprising:

• providing a die body comprising a substrate, a device region over the substrate, and at least one via, wherein the at least one via comprises at least one conductive wall structure defining an interior cavity;
• filling at least a portion of the interior cavity with a carbon allotrope precursor;
• and
• processing the carbon allotrope precursor to form a carbon allotrope structure filling at least a portion of the interior cavity, wherein the carbon allotrope structure extends above and below an interface between the substrate and the device region.

A method comprising:

• providing a die body comprising a substrate, a device region over the substrate;
• and
• forming a semiconductor device in the device region;
• depositing a first metal interconnect over a frontside surface of the device region;
• and
• depositing a carbon allotrope layer that covers at least a portion of the frontside surface such that the carbon allotrope layer covers the semiconductor device and the first metal interconnect.