US 2024/0258176 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

A method for manufacturing a semiconductor device includes providing a buffer substrate, forming a sacrificial contact film on the buffer substrate, forming a sacrificial contact pattern by patterning the sacrificial contact film, forming a first base layer on the buffer substrate that surrounds the sacrificial contact pattern, forming an active pattern on the first base layer and the sacrificial contact pattern that extends in a first direction, forming a gate electrode on the active pattern extending in a second direction intersecting the first direction, forming a source/drain pattern on a side surface of the gate electrode for connection to the active pattern. The source/drain pattern overlaps the sacrificial contact pattern in a third direction intersecting the first and second directions. The sacrificial contact pattern is exposed by removing the buffer substrate. A lower source/drain contact is formed for connection to the source/drain pattern by replacing the exposed sacrificial contact pattern.

Claims20

Dependent claims

A method for manufacturing a semiconductor device, the method comprising:

providing a buffer substrate;
forming a sacrificial contact film on the buffer substrate;
forming a sacrificial contact pattern by patterning the sacrificial contact film;
forming a first base layer on the buffer substrate, the first base layer surrounding the sacrificial contact pattern;
forming an active pattern on the first base layer and the sacrificial contact pattern, the active pattern extending in a first direction parallel to an upper surface of the first base layer;
forming a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and parallel to the upper surface of the first base layer;
forming a source/drain pattern on a side surface of the gate electrode, the source/drain pattern is directly connected to the active pattern, wherein the source/drain pattern overlaps the sacrificial contact pattern in a third direction intersecting the first direction and the second direction and perpendicular to the upper surface of the first base layer;
exposing the sacrificial contact pattern by removing the buffer substrate;
and
forming a lower source/drain contact directly connected to the source/drain pattern by replacing the exposed sacrificial contact pattern.

7 more elements

A method for manufacturing a semiconductor device, the method comprising:

providing a buffer substrate;
forming a first base layer on the buffer substrate, wherein the first base layer includes a first surface facing the buffer substrate and a second surface opposite to the first surface;
forming a sacrificial contact pattern in the first base layer, the sacrificial contact pattern extending from the first surface towards the second surface, wherein a width of the sacrificial contact pattern decreases as the sacrificial contact pattern gets closer to the second surface;
forming an active pattern on the second surface of the first base layer, the active pattern extending in a first direction parallel to an upper surface of the first base layer;
forming a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and parallel to the upper surface of the first base layer;
forming a source/drain pattern on a side surface of the gate electrode, the source/drain pattern is directly connected to the active pattern, wherein the source/drain pattern overlaps the sacrificial contact pattern in a third direction intersecting the first direction and the second direction and perpendicular to the upper surface of the first base layer;
exposing the sacrificial contact pattern by removing the buffer substrate;
and
forming a lower source/drain contact that is directly connected to the source/drain pattern by replacing the exposed sacrificial contact pattern.

6 more elements

A method for manufacturing a semiconductor device, the method comprising:

providing a buffer substrate;
forming a sacrificial contact film on the buffer substrate;
forming a sacrificial contact pattern by patterning the sacrificial contact film;
forming a first base layer surrounding a side surface of the sacrificial contact pattern, wherein the first base layer includes a first surface facing the buffer substrate and a second surface opposite to the first surface;
forming an active pattern on the second surface of the first base layer, the active pattern extending in a first direction parallel to an upper surface of the first base layer;
forming a gate electrode extending in a second direction intersecting the first direction and parallel to the upper surface of the first base layer, the gate electrode penetrating the active pattern;
forming a source/drain pattern on a side surface of the gate electrode, the source/drain pattern is directly connected to the active pattern, wherein the source/drain pattern overlaps the sacrificial contact pattern in a third direction intersecting the first direction and the second direction and perpendicular to the upper surface of the first base layer;
forming a frontside wiring pattern on the second surface of the first base layer, the frontside wiring pattern is electrically connected to the gate electrode and the source/drain pattern;
exposing the sacrificial contact pattern by removing the buffer substrate;
forming a lower source/drain contact directly connected to the source/drain pattern by replacing the exposed sacrificial contact pattern with a lower source/drain contact;
and
forming a backside wiring pattern on the first surface of the first base layer, the backside wiring pattern is directly connected to the lower source/drain contact.

9 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing the same

Life of this patent

Semiconductor device and method for manufacturing the same

Life of this patent

Abstract

Claims20