Method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung TSAI, Yu-Ming LIN, Kuo-Feng YU, Ming-Hsi YEH, Shahaji B. MORE, Chandrashekhar Prakash SAVANT, Chih-Hsin KO, Clement Hsingjen WANN
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Abstract
In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.
Claims20
A method for manufacturing a semiconductor device, comprising:
- etching a substrate to form a fin structure comprising a first plurality of fins and a second plurality of fins over the substrate;
- eliminating damage to the plurality fins caused by the etching the substrate by heating the fin structure at temperature in a range from 900° C. to 1100° C. for 1 sec to 20 sec;
- and
- after the eliminating damage to the plurality of fins, forming an isolation insulating layer such that upper portions of the first plurality of fins and second plurality of fins protrudes from the isolation insulating layer.
A method for manufacturing a semiconductor device, the method comprising:
- etching a substrate to form a fin structure;
- annealing the fin structure;
- and
- after the annealing, forming one or more semiconductor layers over the fin structure,
- wherein the fin structure has a sidewall surface roughness Ra of greater than 0 nm and less than 1.8 nm.
A method for manufacturing a semiconductor device, the method comprising:
- etching a substrate to form a fin structure;
- annealing the fin structure;
- and
- after the annealing, forming one or more semiconductor layers over the fin structure,
- wherein a hydrogen content of the fin structure is in a range from 1×1018 atoms/cm3 to 3×1018 atoms/cm3.
Dependencies are inferred from the claim text.