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US 2024/0258164 A1Published application
Methods of forming interconnect structures
AssigneeApplied Materials, Inc.
InventorsJiajie Cen, Carmen Leal Cervantes, Yong Jin Kim, Kevin Kashefi, Xiaodong Wang
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Abstract
Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A pre-clean process is performed before a self-assembled monolayer (SAM) is formed on the bottom of the gap. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.
Claims20
A method of forming a microelectronic device, the method comprising:
- forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom including a metal surface;
- pre-cleaning the metal surface;
- selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and the metal surface;
- selectively depositing a barrier layer on the sidewalls but not on the metal surface;
- and
- removing the SAM after selectively depositing the barrier layer on the sidewalls.
3 more elements
Dependencies are inferred from the claim text.