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US 2024/0258161 A1Published application
Methods of forming interconnect structures
AssigneeApplied Materials, Inc.
InventorsYong Jin Kim, Carmen Leal Cervantes, Kevin Kashefi, Xingye Wang
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Abstract
Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap which resists degradation when exposed to the ambient atmosphere. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.
Claims20
A method of forming a microelectronic device, the method comprising:
- forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom including a metal surface;
- selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and the metal surface, the SAM comprising densely packed molecules on the metal surface that protect the metal surface from exposure to an ambient atmosphere;
- selectively depositing a barrier layer on the sidewalls but not on the metal surface;
- and
- removing the SAM after selectively depositing the barrier layer on the sidewalls.
2 more elements
Dependencies are inferred from the claim text.