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US 2024/0258160 A1Published application
Amorphous layers for reducing copper diffusion and method forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyh-Nan Lin, Chia-Yu Wu, Kai-Shiung Hsu, Ding-I Liu
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Abstract
A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.
Claims20
An integrated circuit structure comprising:
- a dielectric layer;
- a first conductive feature in the dielectric layer;
- a metal cap over and contacting the first conductive feature, wherein the metal cap is amorphous, and wherein at least a lower part of the metal cap is lower than a top surface of the dielectric layer;
- a first etch stop layer over the metal cap, wherein the first etch stop layer has a first amorphous structure;
- an second etch stop layer over the first etch stop layer, wherein the second etch stop layer has a second amorphous structure or a polycrystalline structure, and the second etch stop layer comprises a material different from a material of the first etch stop layer;
- a low-k dielectric layer over the second etch stop layer;
- and
- a second conductive feature in the low-k dielectric layer, the first etch stop layer, and the second etch stop layer.
5 more elements
An integrated circuit structure comprising:
- a first dielectric layer;
- a first conductive feature in the first dielectric layer, wherein the first conductive feature comprises:
- a diffusion barrier;
- and
- a copper region in the diffusion barrier;
- a cobalt nitride cap over and contacting the copper region;
- an etch stop layer comprising:
- a first sub layer over and contacting the cobalt nitride cap and the first dielectric layer;
- a second sub layer over the first sub layer;
- and
- a third sub layer over the second sub layer, wherein at least one of the first sub layer, the second sub layer, and the third sub layer has an amorphous structure;
- a second dielectric layer over the etch stop layer;
- and
- a conductive via in the second dielectric layer and the etch stop layer.
11 more elements
An integrated circuit structure comprising:
- a first dielectric layer;
- a copper feature in the first dielectric layer;
- a cobalt nitride cap over and contacting the copper feature, wherein the cobalt nitride cap has an amorphous structure;
- an etch stop layer comprising:
- an aluminum nitride layer over the cobalt nitride cap and the first dielectric layer, wherein the aluminum nitride layer has an amorphous structure;
- a silicon oxycarbide layer over the aluminum nitride layer;
- and
- an aluminum oxide layer over the silicon oxycarbide layer, wherein the silicon oxycarbide layer and the aluminum oxide layer have a polycrystalline structure or an amorphous structure;
- a low-k dielectric layer over the etch stop layer;
- and
- a second conductive feature in the low-k dielectric layer and the etch stop layer.
8 more elements
Dependencies are inferred from the claim text.