Wiring structure and semiconductor device comprising the same

A semiconductor device comprising:

• a substrate;
• a front end of line (FEOL) layer including a plurality of lower contact structures including a first lower contact structure and a second lower contact structure, and an interlayer insulating film covering the plurality of lower contact structures;
• and
• a wiring structure disposed on the FEOL layer,
• wherein the wiring structure comprises an etch stop film disposed on the substrate, a first insulating film disposed on the etch stop film, and a first wiring layer extending in a vertical direction perpendicular to an upper surface of the substrate and extending through the first insulating film and the etch stop film,
• wherein a sidewall of the first wiring layer forms a first inclination angle of about 88 degrees to about 90 degrees with respect to a first horizontal direction parallel to an upper surface of the substrate and a surface of the first insulating film and a surface of the etch stop film in direct contact with the first wiring layer have a carbon (C) concentration of about 3 at % or less.

A wiring structure comprising:

• an etch stop film disposed on a substrate and including oxide-doped carbide (ODC);
• a first insulating film disposed on the etch stop film;
• a first wiring layer extending in a vertical direction perpendicular to an upper surface of the substrate and extending through the first insulating film and the etch stop film;
• and
• a second wiring layer spaced apart from the first wiring layer and extending in the vertical direction through the first insulating film and the etch stop film,
• wherein a sidewall of the first wiring layer forms a first inclination angle in a range of about 88 degrees to about 90 degrees with respect to a first horizontal direction parallel to a top surface of the substrate, a sidewall of the second wiring layer forms a second inclination angle in a range of about 83 degrees to about 87 degrees with respect to the first horizontal direction, and a surface of the first insulating film in direct contact with the first wiring layer, a surface of the etch stop film and a surface of the first insulating film in direct contact with the second wiring layer, and a surface of the etch stop film have a carbon (C) concentration less than or equal to about 3 at %.