Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof

A method of preparing a multilayer structure, the method comprising:

• depositing a semiconductor oxynitride layer on a first dielectric layer in interfacial contact with a front surface of a first single crystal semiconductor substrate, wherein the first single crystal semiconductor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the first single crystal semiconductor substrate and the other of which is a back surface of the first single crystal semiconductor substrate, a circumferential edge joining the front surface and the back surface of the first single crystal semiconductor substrate, a central plane between the front surface and the back surface of the first single crystal semiconductor substrate, and a bulk region between the front and back surfaces of the first single crystal semiconductor substrate, wherein the semiconductor oxynitride layer is deposited by plasma enhanced chemical vapor deposition, and wherein, during deposition of the semiconductor oxynitride layer, at least one process parameter is controlled to produce a nitrogen concentration gradient and an oxygen concentration gradient in the semiconductor oxynitride layer;
• and
• bonding a second dielectric layer in interfacial contact with a front surface of a second single crystal semiconductor substrate to the semiconductor oxynitride layer, wherein the second single crystal semiconductor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the second single crystal semiconductor substrate and the other of which is a back surface of the second single crystal semiconductor substrate, a circumferential edge joining the front and back surfaces of the second single crystal semiconductor substrate, a central plane between the front and back surfaces of the second single crystal semiconductor substrate, and a bulk region between the front and back surfaces of the second single crystal semiconductor substrate, to thereby form a bonded structure comprising the first single crystal semiconductor substrate, the first dielectric layer, the semiconductor oxynitride layer, the second dielectric layer, and the second single crystal semiconductor substrate.