Method, assembly and system for film deposition and control
AssigneeASM IP Holding B.V.
InventorsJereld Lee Winkler, Eric Christopher Stevens, Amit Mishra, Chad Russell Lunceford, Paul Ma
Life of this patent
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Abstract
Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a conductance control region above and exterior to the ramp region. Methods, systems, and assemblies can be used to obtain desired (e.g., composition and/or thickness) profiles of material on a substrate surface.
Claims21
A susceptor assembly, comprising:
- a susceptor plate comprising a susceptor plate first surface;
- and
- a susceptor attachment comprising:
- a susceptor attachment first surface, the susceptor attachment first surface comprising a ramp region and a conductance control region above and exterior of the ramp region;
- and
- a susceptor attachment second surface adjacent the susceptor plate first surface.
A reactor system, comprising:
- a reaction chamber comprising an upper region and a lower region;
- a gas distribution device disposed within the upper region, wherein the gas distribution device comprises a gas distribution device first surface;
- a susceptor plate comprising a susceptor plate first surface;
- and
- a susceptor attachment comprising:
- a susceptor attachment first surface, the susceptor attachment first surface comprising a ramp region and a conductance control region above and exterior of the ramp region;
- and
- a susceptor attachment second surface adjacent the susceptor plate first surface.
A reactor system, comprising:
- a reaction chamber comprising an upper region and a lower region;
- a gas distribution device disposed within the upper region, wherein the gas distribution device comprises a gas distribution device first surface;
- a susceptor plate comprising a susceptor plate first surface;
- a susceptor attachment comprising:
- a susceptor attachment first surface, the susceptor attachment first surface comprising a ramp region and a conductance control region above and exterior of the ramp region;
- and
- a susceptor attachment second surface adjacent the susceptor plate first surface;
- and
- a chamber sealing assembly in contact with the susceptor attachment, comprising:
- a sealing ring comprising a sealing ring first surface;
- a member coupled to the sealing ring first surface;
- a flange coupled to the member;
- and
- a spring coupled to the flange.
A method comprising the steps of:
- providing a substrate within a reaction chamber of a reactor system, wherein the reactor system comprises:
- an upper region and a lower region, wherein the upper region comprises a reaction space;
- a gas distribution device disposed within the upper region, wherein the gas distribution device comprises a gas distribution device first surface;
- and
- a susceptor assembly comprising:
- a susceptor plate comprising a susceptor plate first surface;
- and
- a susceptor attachment comprising:
- a susceptor attachment first surface, the susceptor attachment first surface comprising a ramp region and a conductance control region, and
- a susceptor attachment second surface adjacent the susceptor plate first surface, and
- an elevator coupled to the susceptor plate, wherein the elevator is configured to raise and lower the susceptor plate;
- and
- manipulating, using the susceptor assembly, a conductance of an exhaust path of the reaction space by moving the conductance control region of the susceptor assembly relative to the gas distribution device first surface.
Dependencies are inferred from the claim text.