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US 2024/0258127 A1Published application
Plasma etching chemistries of high aspect ratio features in dielectrics
AssigneeLam Research Corporation
InventorsKeren J. KANARIK, Samantha SiamHwa TAN, Yang PAN, Jeffrey MARKS
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Abstract
A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.
Claims20
An etching method, comprising:
- a) supporting a substrate on a chuck in a chamber of a plasma treatment system, the chuck having a lower electrode, wherein the substrate comprises a stack comprising at least two different silicon containing layers comprising at least one silicon oxide layer and at least one silicon nitride layer;
- b) cooling the substrate to a temperature below −20° C.;
- c) providing an etch gas comprising a halogen containing gas;
- d) generating a plasma from the etch gas;
- and
- e) etching, with the plasma generated from the etch gas, features in the at least one silicon oxide layer and the at least one silicon nitride layer forming the stack.
3 more elements
An etching method, comprising:
- a) supporting a substrate on a chuck in a chamber of a plasma treatment system, the chuck having a lower electrode, wherein the substrate comprises a stack comprising at least two different silicon containing layers comprising at least one silicon oxide layer and at least one silicon nitride layer;
- b) providing an etch gas comprising a halogen containing gas;
- c) generating a plasma from the etch gas;
- and
- d) etching, with the plasma generated from the etch gas, features in the at least one silicon oxide layer and the at least one silicon nitride layer forming the stack.
2 more elements
Dependencies are inferred from the claim text.