Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool

A method for processing a semiconductor device, the method comprising:

• providing a process gas to a process chamber body of a semiconductor processing tool;
• applying a vacuum to a chuck provided within the process chamber body, via a chuck vacuum line connected to the chuck, to retain a semiconductor device against the chuck;
• and
• removing the process gas from the process chamber body via a main pumping line connected to the process chamber body and a pump connected to the main pumping line,
• wherein an end portion of the chuck vacuum line is provided within the main pumping line,
• wherein an orientation of the end portion of the chuck vacuum line is approximately parallel to an orientation of the main pumping line to prevent buildup of processing byproduct on interior walls of the main pumping line, and
• wherein the pump and the main pumping line cause the vacuum to be applied to the chuck via the chuck vacuum line.

A gas flow accelerator, comprising:

• a cylindrical body portion;
• a tapered cylindrical body portion including a first end integrally formed with the cylindrical body portion,
• wherein the tapered cylindrical body portion is configured to prevent buildup of processing byproduct on interior walls of a main pumping line;
• an inlet port connected to the cylindrical body portion and configured to receive a gas from the main pumping line;
• an outlet port integrally formed with a second end of the tapered cylindrical body portion;
• and
• a pressure relief port connected to the cylindrical body portion,
• wherein the pressure relief port and the outlet port are configured to hold a portion of a chuck vacuum line.