Systems and methods for titanium-containing film removal

A semiconductor processing method comprising:

• forming a plasma of a treatment precursor comprising one or more of oxygen, hydrogen, or nitrogen to produce treatment plasma effluents;
• flowing the treatment plasma effluents into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate defines an exposed region of a titanium-containing material;
• contacting the substrate with the treatment plasma effluents, wherein the treatment plasma effluents are configured to remove a residue from a surface of the titanium-containing material;
• flowing an etchant precursor into the processing region of the semiconductor processing chamber;
• contacting the substrate with the etchant precursor;
• and
• removing at least a portion of the titanium-containing material.

A semiconductor processing method comprising:

• flowing an etchant precursor into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate defines an exposed region of a titanium-containing material;
• contacting the substrate with the etchant precursor;
• removing at least a portion of the titanium-containing material;
• forming a plasma of a treatment precursor comprising one or more of oxygen, hydrogen, or nitrogen to produce treatment plasma effluents;
• and
• contacting the substrate with the treatment plasma effluents.