Method of depositing a tungsten containing layer
AssigneeApplied Materials, Inc.
InventorsXi CEN, Kai WU, Min-Han LEE, Yang LI, Cheng CHENG, Zhixiu LIANG
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Abstract
A method of forming a structure on a substrate includes forming an adhesion layer on a substrate. The method further includes forming a tungsten containing layer in-situ with the adhesion layer. The tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. The method further includes removing the tungsten containing layer from the adhesion layer.
Claims20
A method of forming a structure on a substrate, comprising:
- forming an adhesion layer on a substrate within a first substrate processing system;
- forming a tungsten containing layer within the first substrate processing system after forming the adhesion layer and prior to exposing the adhesion layer to air, wherein the tungsten containing layer is formed by a one-time soak process including:
- soaking the substrate once, and only once, in a first gas;
- purging the first gas;
- and
- soaking the substrate once, and only once, in a second gas;
- and
- removing the tungsten containing layer from the adhesion layer.
A method of forming a structure on a substrate, comprising:
- soaking a substrate with a titanium nitride layer disposed thereon once, and only once, with a first amount of a tungsten hexafluoride for a first time duration in a first process chamber of a first substrate processing system;
- purging the tungsten hexafluoride from the first process chamber;
- soaking the substrate once, and only once, with a second amount of a diborane for a second time duration in the first process chamber after purging the tungsten hexafluoride from the first process chamber to form a tungsten containing layer on the titanium nitride layer;
- and
- removing the substrate from the first substrate processing system to expose a surface of the tungsten containing layer to an atmospheric air.
A method of forming a structure on a substrate, comprising:
- soaking a substrate with a titanium nitride layer disposed thereon once, and only once, with a first amount of diborane for a first time duration in a first process chamber of a first substrate processing system;
- purging the diborane from the first process chamber;
- soaking the substrate once, and only once, with a second amount of a tungsten hexafluoride for a second time duration in the first process chamber after purging the diborane from the first process chamber to form a tungsten containing layer on the titanium nitride layer;
- and
- removing the substrate from the first substrate processing system to expose a surface of the tungsten containing layer to an atmospheric air.
Dependencies are inferred from the claim text.