Thin film deposition method
AssigneeJusung Engineering Co., Ltd.
InventorsYoon Jeong KIM, Jung Kyun LEE
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Abstract
The present disclosure relates to a method for depositing a thin film, and more particularly, to a method for depositing a thin film, which forms a gate insulation film on a silicon carbide substrate. In accordance with an exemplary embodiment, a method for depositing a thin film includes: preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process.
Claims10
A method for depositing a thin film, comprising:
- preparing a silicon carbide substrate having a plurality of semiconductor regions;
- and
- forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process.
The method for depositing a thin film of claim 8, wherein the removing of the impurities comprises performing a plasma surface treatment on the silicon carbide substrate.
Dependencies are inferred from the claim text.