Substrate processing method
AssigneeASM IP Holding B.V.
InventorsJihye Yang, Hongsuk Kim, JuHyuk Park, SungHa Choi, SangHeon Yong, KiHun Kim
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Abstract
A substrate processing method includes providing a substrate having a gap structure into a reaction space, and supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film on the substrate to fill at least a part of the gap of the substrate, while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode, wherein as a duty ratio of the RF power decreases, fewer micropores are generated in the silicon nitride film in the gap.
Claims20
A substrate processing method comprising:
- providing a substrate having a gap structure into a reaction space;
- and
- supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film on the substrate to fill at least a part of the gap of the substrate, while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode,
- wherein the RF power has a duty ratio of 50% or less.
A substrate processing method comprising:
- providing a substrate having a gap structure into a reaction space;
- supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film in a gap of the substrate while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode;
- converting the flowable silicon nitride film into a silicon oxide film;
- and
- forming a densified silicon oxide film by densifying the silicon oxide film,
- wherein as a duty ratio of the RF power is 50% or less.
A method of filling a gap structure formed in a substrate with a flowable film, the method comprising:
- supplying a source;
- supplying a reactant having reactivity with the source;
- generating radicals of at least the reactant by applying, for a first time, plasma via an electrode arranged in a reaction space;
- and
- suspending, for a second time, the applying of the plasma, wherein the second time is greater than the first time.
Dependencies are inferred from the claim text.