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US 2024/0258086 A1Published application
Film formation method and film formation apparatus
AssigneeTokyo Electron Limited
InventorsTadashi MITSUNARI, Hiroki ARAI
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Abstract
A film formation method comprising: placing a substrate on a substrate table provided in a treatment container, discharging air inside the treatment container to reduce pressure therein; producing plasma by applying a combination of a high-frequency power and a direct-current pulsed voltage to the substrate table while supplying a treatment gas containing a carbon-containing gas into the pressure-reduced treatment container, to form a carbon film on the substrate.
Claims20
A film forming method comprising:
- placing a substrate on a substrate placement table provided in a processing container;
- exhausting and depressurizing inside of the processing container;
- and
- forming a carbon film on the substrate by applying superimposed high frequency power and direct current pulse voltage to the substrate placement table to generate plasma while supplying a processing gas containing a carbon-containing gas into the depressurized processing container.
1 more element
A film forming apparatus comprising:
- a processing container configured to contain a substrate;
- a substrate placement table on which the substrate is placed and placed inside the processing container;
- an upper electrode provided to face the substrate placement table;
- a processing gas supply configured to supply a gas used for processing into the processing container;
- an exhaust apparatus configured to exhaust the inside of the processing container to depressurize the inside of the processing container;
- a high frequency power supply configured to supply high frequency power to the substrate placement table;
- a direct current pulse power supply configured to apply a direct current pulse voltage to the substrate placement table;
- and
- a controller,
- wherein the controller is configured to control the exhaust apparatus such that the inside of the processing container is depressurized to a desired pressure in a state in which the substrate is placed on the substrate placement table, and control the gas supply, the high frequency power supply, and the direct current pulse power supply such that superimposed high frequency power and direct current pulse voltage are applied to the substrate placement table, while supplying a processing gas containing a carbon-containing gas into the processing container, thereby forming a carbon film on the substrate.
7 more elements
Dependencies are inferred from the claim text.