Apparatus and method for plasma etching

An apparatus for plasma etching comprising:

• an electrostatic chuck disposed in a chamber in which a plasma etching process is performed, and including a base layer, a bonding layer disposed on the base layer, and an adsorption layer including a plurality of protrusions disposed on the bonding layer and contacting a lower surface of a substrate to be subjected to the plasma etching process;
• a plurality of pipes configured to supply coolant to the base layer to adjust a temperature of the electrostatic chuck;
• a cooling device configured to supply the coolant to cause the electrostatic chuck to reach a first temperature between about −40° C. and −5° C. during a first operation of the plasma etching process, and configured to supply the coolant to cause the electrostatic chuck to reach a second temperature between about 30° C. and 90° C. during a second operation of the plasma etching process after the first operation;
• and
• a controller configured to control a valve connected to the plurality of pipes to control a circulation of the coolant,
• wherein the base layer includes a first region having a second diameter greater than a first diameter of the substrate, and a second region having a third diameter smaller than the first diameter,
• wherein the bonding layer has the third diameter, and
• wherein the adsorption layer has a fourth diameter smaller than the first diameter and equal to or greater than the third diameter.