Capacitively coupled plasma substrate processing apparatus

A plasma substrate processing apparatus comprising:

• a process chamber;
• an upper electrode disposed in the process chamber;
• a substrate holder disposed below the upper electrode and disposed to oppose the upper electrode to support the substrate;
• and
• an RF power source applying RF power to the substrate holder,
• wherein
• the upper electrode comprises:
• an upper electrode conductive plate;
• and
• a compensation plate coupled to a lower portion of the conductive plate and having a dielectric constant varying depending on location,
• a lower surface of the compensation plate is a coplanar surface, and
• the compensation plate is coupled to the upper electrode conductive plate.

A plasma substrate processing apparatus comprising:

• a process chamber;
• an upper electrode disposed in the process chamber;
• a substrate holder disposed below the upper electrode and disposed to oppose the upper electrode to support the substrate;
• an RF power source applying RF power to the substrate holder;
• and
• at least one ground cavity,
• wherein
• the ground cavity is disposed below the upper electrode to surround plasma between the substrate holder and the upper electrode and has a cylindrical shape,
• the ground cavity comprises a plurality of slits, and
• an inner diameter of the ground cavity is larger than an outer diameter of the substrate holder.