Memory read operation using a voltage pattern based on a read command type
AssigneeMicron Technology, Inc.
InventorsYu-Chung LIEN, Ching-Huang LU, Zhenming ZHOU
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsYu-Chung LIEN, Ching-Huang LU, Zhenming ZHOU
Estimating the term…
In some implementations, a memory device may detect a read command associated with reading data stored by the memory device. The memory device may determine whether the read command is from a host device in communication with the memory device. The memory device may select, based on whether the read command is from the host device, one of a first voltage pattern or a second voltage pattern to be applied to memory cells of the memory device to execute the read command, wherein the first voltage pattern is selected if the read command is from the host device and the second voltage pattern is selected if the read command is not from the host device, wherein the second voltage pattern is different from the first voltage pattern. The memory device may execute the read command using a selected one of the first voltage pattern or the second voltage pattern.
A memory device, comprising:
A method, comprising:
A system, comprising:
Dependencies are inferred from the claim text.