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US 2024/0256146 A1Published application
Redundancy for an array of non-volatile memory cells using tag registers
AssigneeSilicon Storage Technology, Inc.
InventorsHieu Van Tran, Thuan Vu, Kha Nguyen, Stephen Trinh, Stanley Hong, Hien Pham
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Abstract
Numerous examples are disclosed of systems and methods to implement redundancy. In one example, a system comprises an array of non-volatile memory cells; a redundant array of non-volatile memory cells; and an input block coupled to respective rows in the array and respective rows in the redundant array and comprising row tag registers and redundant row tag registers.
Claims20
A system comprising:
- an array of non-volatile memory cells arranged into rows and columns;
- a redundant array of non-volatile memory cells arranged into rows and columns;
- and
- an input block coupled to respective rows in the array and respective rows in the redundant array and comprising row tag registers and redundant row tag registers;
- wherein row tag registers respectively store one of a first value indicating a respective row of the array of non-volatile memory cells is to be used and a second value indicating the respective row of the array of non-volatile memory cells is not to be used and redundant row tag registers respectively store one of a third value indicating a respective row of the redundant array of non-volatile memory cells is to be used and a fourth value indicating the respective row of the redundant array of non-volatile memory cells is not to be used, and wherein the row tag registers and the redundant row tag registers identify rows and redundant rows to be read during a neural read operation.
2 more elements
A method comprising:
- converting data stored in row registers, based on values stored in row tag registers, into a first set of analog voltages and applying the first set of analog voltages to respective rows of non-volatile memory cells in an array of non-volatile memory cells;
- converting data stored in redundant row registers, based on values stored in redundant row tag registers, into a second set of analog voltages and applying the second set of analog voltages to respective rows of non-volatile memory cells in a redundant array of non-volatile memory cells;
- and
- receiving current from the array of non-volatile memory cells and the redundant array of non-volatile memory cells.
1 more element
A system comprising:
- an array of non-volatile memory cells arranged into rows and columns;
- a redundant array of non-volatile memory cells arranged into rows and columns;
- and
- an output block coupled to respective columns in the array and respective columns in the redundant array and comprising a column multiplexor, a column tag register, and a redundant column multiplexor;
- wherein column tag registers respectively store one of a first value indicating a respective column of the array of non-volatile memory cells is to be used and a second value indicating the respective column of the array of non-volatile memory cells is not to be used and an associated redundant column of the redundant array of non-volatile memory cells is to be used and wherein the column tag registers identify columns to be used during a neural read operation.
2 more elements
A method comprising:
- receiving current from columns in an array associated with column tag bits of a first value;
- and
- receiving current from redundant columns in a redundant array when the redundant columns are associated with columns in the array associated with column tag bits of a second value.
Dependencies are inferred from the claim text.