Systems and methods for integration of thin film optical materials in silicon photonics
AssigneeRaytheon Company
InventorPing Piu KUO
Life of this patent
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Abstract
A method of fabricating a photonics stack includes providing a silicon photonics structure having a silicon substrate, an oxide layer, and an epitaxial silicon layer with one or more active devices. The method also includes providing an interposer structure and attaching the silicon photonics structure and the interposer structure. The method further includes removing the silicon substrate from the silicon photonics structure and removing at least a portion of the oxide layer from the silicon photonics structure. In addition, the method includes disposing a thin film lithium niobate coupon on or within the silicon photonics structure and encapsulating the thin film lithium niobate coupon with an optical material.
Claims21
A photonics device comprising:
- a silicon waveguide structure disposed in a first plane;
- a plurality of modulator electrodes, at least a portion of each of the modulator electrodes disposed in the first plane;
- and
- an optical material disposed in a second plane adjacent the first plane.
A photonics stack comprising:
- a silicon layer comprising an active device and positioned in a first plane, wherein the active device is disposed at a lateral position of the silicon layer;
- and
- a lithium niobate structure positioned in a second plane adjacent the first plane, wherein the lithium niobate structure is disposed at the lateral position.
A method of fabricating a photonics stack, the method comprising:
- providing a silicon photonics structure that comprises a silicon substrate, an oxide layer, and an epitaxial silicon layer with one or more active devices;
- providing an interposer structure;
- attaching the silicon photonics structure and the interposer structure;
- removing the silicon substrate from the silicon photonics structure;
- removing at least a portion of the oxide layer from the silicon photonics structure;
- disposing a thin film lithium niobate coupon on or within the silicon photonics structure;
- and
- encapsulating the thin film lithium niobate coupon with an optical material.
Dependencies are inferred from the claim text.