Polishing composition, polishing method, and method of manufacturing semiconductor substrate

Abstract

The present invention provides a method capable of increasing a ratio (selection ratio) of a polishing removal rate of silicon oxide or silicon nitride to a polishing removal rate of polysilicon and further reducing residues (preferably organic residues) on a surface of a polished object to be polished. The present invention is a polishing composition containing colloidal silica, an inorganic salt containing no halogen, and a water-soluble polymer, in which a product of a valence number (unit: valency) of an anion of the inorganic salt and a concentration (unit: mM) of the anion in the polishing composition is 57 or more.

Dependencies are inferred from the claim text.