Surface emitting laser apparatus and method for manufacturing the same
AssigneeHlj Technology Co., Ltd.
InventorsLI-HUNG LAI, LI-WEN LAI
Life of this patent
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Abstract
A surface emitting laser apparatus and a method for manufacturing the same are provided. The surface emitting laser apparatus includes a first reflector layer, an active light-emitting layer, a second reflector layer, and a current confinement layer. The active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam. The current confinement layer is disposed above or below the active light-emitting layer. The current confinement layer is a semiconductor layer, and an energy gap width of the current confinement layer is greater than an energy gap width of the active light-emitting layer.
Claims13
A surface emitting laser apparatus, comprising:
- a first reflector layer;
- an active light-emitting layer;
- a second reflector layer, wherein the active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam;
- and
- a current confinement layer disposed above or below the active light-emitting layer, wherein the current confinement layer is a semiconductor layer, and an energy gap width of the current confinement layer is greater than 0.8 eV and less than 1.4 eV, or is greater than 2.3 eV.
A surface emitting laser apparatus, comprising:
- a first reflector layer;
- an active light-emitting layer;
- a second reflector layer, wherein the active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam;
- and
- a current confinement layer disposed in the first reflector layer or the second reflector layer and including at least one doped semiconductor layer;
- wherein, when the current confinement layer is disposed in the first reflector layer, the at least one doped semiconductor layer and the first reflector layer have different conductivity types;
- wherein, when the current confinement layer is disposed in the second reflector layer, the at least one doped semiconductor layer and the second reflector layer have different conductivity types.
A method for manufacturing a surface emitting laser apparatus, comprising:
- forming a first reflector layer;
- forming an active light-emitting layer on the first reflector layer;
- forming a current confinement layer, wherein the current confinement layer defines a confinement hole and includes an intrinsic semiconductor layer or a doping semiconductor layer;
- and
- forming a second reflector layer.
Dependencies are inferred from the claim text.