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US 2024/0234079 A9Published application
Ion source structure of ion implanter and its operation method
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsWen Shuo Cui, WEN YI TAN
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Abstract
The invention provides an ion source structure of an ion implanter, which comprises an arc chamber, a filament in the arc chamber, and a cathode in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar.
Claims18
An ion source structure of an ion implanter, comprising:
- an arc chamber;
- a filament located in the arc chamber;
- and
- a cathode located in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar.
1 more element
An operation method of an ion source structure of an ion implanter, comprising:
- providing a wafer with a pattern;
- an ion implanter is provided, wherein an ion source structure in the ion implanter comprises:
- an arc chamber;
- a filament located in the arc chamber;
- a cathode located in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar;
- and
- using the ion implanter to perform an ion implantation step on the wafer.
4 more elements
Dependencies are inferred from the claim text.