Single-crystal diamond and method of manufacturing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorsYikang ZUO, Jin Hwa LEE, Yoshiki NISHIBAYASHI, Yutaka KOBAYASHI, Minori TERAMOTO, Hitoshi SUMIYA
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Abstract
A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm−1 to 1333 cm−1 in a Raman spectrum has a half-width of 2.0 cm−1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a 13C content of less than 0.01% based on the number of atoms.
Claims15
A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less,
- wherein the half-width of the X-ray diffraction rocking curve is measured with CuKα radiation in a (004) plane parallel arrangement using a diamond crystal as a first crystal in X-ray diffraction by a double-crystal method,
- a peak at a Raman shift in the range of 1332 cm−1 to 1333 cm−1 in a Raman spectrum has a half-width of 2.0 cm−1 or less,
- the single-crystal diamond has an etch-pit density of 10,000/cm2 or less,
- the etch-pit density is measured in an etching test,
- the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and
- the single-crystal diamond has a 13C content of less than 0.01% based on the number of atoms.
Dependencies are inferred from the claim text.