Semiconductor device and methods for fabricating and operating the device
AssigneeMicrosoft Technology Licensing, LLC
InventorPavel ASEEV
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Abstract
A semiconductor device comprises a crystalline substrate and a nanowire arranged epitaxially on the crystalline substrate. The nanowire comprises: a gating layer arranged over the substrate, a quantum well arranged over the gating layer, an intermediate barrier arranged between the gating layer and the quantum well, and an upper barrier arranged over the quantum well. By incorporating a gating layer into the nanowire, bottom gating of the quantum well is made possible without requiring the substrate to incorporate the bottom gate. Also provided are a method of operating the semiconductor device, and a method of fabricating the semiconductor device.
Claims21
1-15. (canceled)
A semiconductor device, comprising:
- a crystalline substrate;
- and
- a nanowire arranged epitaxially on the crystalline substrate;
- wherein the nanowire comprises:
- a gating layer arranged over the substrate;
- a quantum well arranged over the gating layer;
- an intermediate barrier arranged between the gating layer and the quantum well;
- and
- an upper barrier arranged over the quantum well.
A method of operating the semiconductor device,
- wherein the semiconductor device comprises:
- a crystalline substrate;
- and
- a nanowire arranged epitaxially on the crystalline substrate;
- wherein the nanowire comprises:
- a gating layer arranged over the substrate;
- a quantum well arranged over the gating layer;
- an intermediate barrier arranged between the gating layer and the quantum well;
- and
- an upper barrier arranged over the quantum well;
- which method comprises:
- applying an electrostatic potential to the gating layer, whereby the gating layer acts as a gate electrode for gating the quantum well.
A method of fabricating a semiconductor device, which method comprises:
- forming a mask over a crystalline substrate, the mask having an opening defining an area for growing a nanowire;
- and
- subsequently growing a nanowire epitaxially on the crystalline substrate in the area;
- wherein growing the nanowire comprises:
- growing a lower barrier over the substrate;
- growing a gating layer over the lower barrier;
- growing an intermediate barrier over the gating layer;
- growing a quantum well over the intermediate barrier;
- and
- growing an upper barrier over the quantum well.
Dependencies are inferred from the claim text.