Wide based high voltage bipolar junction transistor with buried collectors as hybrid igbt building block
AssigneeIpower Semiconductor
InventorHamza Yilmaz
Life of this patent
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Abstract
A high voltage bipolar junction transistor (BJT) enables package integration with a MOSFET as a base driver for the BJT in the same package. The BJT may include a wide base to block the high voltage with a lightly doped wide-base region rather than in a lightly doped collector region. Collector regions of the BJT may be buried and additional floating collector regions may underly the buried collector regions. The package integration allows the MOSFET and the BJT to be fabricated using separately optimized semiconductor materials and processing while providing the operation of a power IGBT with higher performance.
Claims18
A vertical Bipolar Junction Transistor (BJT) device comprising:
- a first layer of a semiconductor having a first conductivity type, the first layer forming an emitter;
- a second layer of a semiconductor having a second conductivity type, the second layer including containing a drift region and a field stop region on the first layer;
- and
- one or more collector regions of the first conductivity type in the second layer, the collector regions having boundaries laterally separated by a separation Wb forming one or more base regions between the boundaries of the collector regions.
A vertical Bipolar Junction Transistor (BJT) comprising:
- a first layer of a semiconductor having a first conductivity type semiconductor and forming an emitter of the vertical BJT;
- a second layer of a semiconductor having a second conductivity type and forming a drift region and a field stop region for voltage blocking, the second layer including one or more trenches;
- one or more collector regions of the first conductivity type at a bottom of the trenches, the collector regions having boundaries laterally separated by a gap Wb;
- conductive material connecting the collector regions at the bottom of the trenches via trenches to a collector electrode;
- one or more base regions of the second conductivity type and overlying the drift region, the base regions being more heavily doped than the drift region and being connect to the drift region through the gap Wb;
- and
- a base electrode connected to the base regions.
A vertical Bipolar Junction Transistor (BJT) comprising:
- a first layer of a first conductivity type semiconductor forming an emitter;
- a second layer of a second conductivity type semiconductor containing a drift region and a field stop region, the second layer further containing:
- one or more trenches on top of one or more buried collector regions of the first conductivity type;
- the buried collector regions having boundaries separated laterally by a gap Wb;
- and
- one or more floating regions of the first conductivity type that are separated vertically from and below the buried collector regions;
- conductive material connecting the buried collector regions at the bottom of the trenches via the trenches to a collector electrode;
- and
- one or more base regions of the second conductivity type connected to a base electrode, the base regions being between the trenches.
A hybrid Insulated Gate Bipolar Transistor (IGBT), comprising:
- a bipolar junction transistor (BJT) chip;
- a vertical MOSFET chip on top of a base electrode of the BJT chip, a drain terminal of the vertical MOSFET chip being electrically connected the base electrode;
- a first package terminal electrically connected to a collector electrode of the BJT chip;
- a second package terminal electrically connected to a source electrode of the vertical MOSFET chip and electrically connected to a collector electrode of the BJT chip;
- and
- a third package terminal connected to a gate electrode of the vertical MOSFET chip.
Dependencies are inferred from the claim text.