Reflective mask for extreme ultraviolet lithography and a method of fabricating a semiconductor device using the same

A method of fabricating a semiconductor device, comprising:

• forming an etch target layer, a mask layer, and a photoresist layer sequentially stacked on a substrate;
• performing a printing process using an extreme ultraviolet (EUV) reflective mask on the photoresist layer to form a photoresist pattern including a hole;
• and
• patterning the mask layer and the etch target layer using the photoresist pattern as an etch mask,
• wherein the EUV reflective mask comprises a main pattern and non-diffraction patterns,
• the non-diffraction patterns form a honeycomb shape,
• a pitch between the non-diffraction patterns is less than a diffraction limit, and
• the hole is printed from the main pattern.

A method of fabricating a semiconductor device, comprising:

• forming a front-end-of-line (FEOL) layer on a substrate, the FEOL layer comprising a plurality of transistors on the substrate;
• forming an interlayer insulating layer on the FEOL layer;
• forming a mask layer and a photoresist layer on the interlayer insulating layer;
• performing a printing process using an extreme ultraviolet (EUV) reflective mask on the photoresist layer to form a photoresist pattern including a hole;
• patterning the mask layer and the interlayer insulating layer using the photoresist pattern as an etch mask;
• and
• forming a via pattern or a contact pattern by filling the hole, which is in the interlayer insulating layer, with a metallic material,
• wherein the EUV reflective mask comprises an isolated pattern and non-diffraction patterns near the isolated pattern,
• a pitch between adjacent ones of the non-diffraction patterns is less than a diffraction limit, and
• the hole is printed from the isolated pattern.