Optical semiconductor element
AssigneeMitsubishi Electric Corporation
InventorHiroyuki KAWAHARA
Life of this patent
Estimating the term…
Abstract
An optical semiconductor element of the present disclosure includes: a first-conductivity-type semiconductor substrate; a stripe-shaped mesa structure including a laminate of a first-conductivity-type cladding layer, an active layer, and a second-conductivity-type first cladding layer layered on the first-conductivity-type semiconductor substrate; and a mesa buried layer including a semi-insulating first buried layer, a first-conductivity-type second buried layer, and a semi-insulating third buried layer doped with a transition metal, which are sequentially formed on both side surfaces of the mesa structure on the first-conductivity-type semiconductor substrate.
Claims17
An optical semiconductor element comprising:
- an n-type InP semiconductor substrate;
- a stripe-shaped mesa structure including a laminate of an n-type InP cladding layer, an active layer, and a p-type InP first cladding layer layered on the n-type InP semiconductor substrate;
- and
- a mesa buried layer including a semi-insulating InP first buried layer, an n-type InP second buried layer adjacent to the semi-insulating InP first buried layer, and a semi-insulating InP third buried layer which is adjacent to the n-type InP second buried layer and is doped with a transition metal, which are sequentially formed on both side surfaces of the mesa structure on the n-type InP semiconductor substrate.
An optical semiconductor element comprising:
- a first-conductivity-type semiconductor substrate;
- a stripe-shaped mesa structure including a laminate of a first-conductivity-type cladding layer, an active layer, a second-conductivity-type first cladding layer, a second-conductivity-type second cladding layer, and a second-conductivity-type contact layer layered on the first-conductivity-type semiconductor substrate;
- and
- a mesa buried layer including a semi-insulating first buried layer, a first-conductivity-type second buried layer, and a semi-insulating third buried layer doped with a transition metal, which are sequentially formed on both side surfaces of the mesa structure on the first-conductivity-type semiconductor substrate, wherein
- a top surface of the mesa structure and a surface of the semi-insulating third buried layer form the same plane.
An optical semiconductor element comprising:
- an n-type InP semiconductor substrate;
- a stripe-shaped mesa structure including a laminate of an n-type InP cladding layer, an active layer, and a p-type InP first cladding layer layered on the n-type InP semiconductor substrate;
- a mesa buried layer including a semi-insulating InP first buried layer and an n-type InP second buried layer adjacent to the semi-insulating InP first buried layer, which are formed on both side surfaces of the mesa structure on the n-type InP semiconductor substrate;
- a semi-insulating InP cladding layer doped with a transition metal, the semi-insulating InP cladding layer being formed on a top surface of the mesa structure and at least a surface of the n-type InP second buried layer;
- a p-type contact layer formed on the semi-insulating InP cladding layer;
- and
- a p-type dopant diffused region formed in the second-conductivity-type the p-type contact layer, the semi-insulating InP cladding layer, and at least a part of the p-type InP first cladding layer.
12-19. (canceled)
Dependencies are inferred from the claim text.