# US 2024/0206263 A1 · Light emitting display apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0206263 A1 - Document ID: US20240206263A1 - Status: Published application - Kind: A1 - Application number: 18/529,154 - Filed: 2023-12-05 - Published: 2024-06-20 - Earliest claimed: 2022-12-15 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: Seol HEO; Junho OH; MinGyu SONG - Web page: https://patentgrep.com/patent/US20240206263A1 ## CPC - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A light emitting display apparatus may include a subpixel including a light emission area and a circuit area, which are disposed to be adjacent to each other in a first direction, a driving transistor provided in the circuit area of the subpixel, including an active layer and a gate electrode, a light emitting element provided in the light emission area of the subpixel, including an anode electrode, a light emitting layer and a cathode electrode, a pixel power line supplying a pixel power source to the driving transistor of the subpixel, and a pixel power connection pattern connecting the pixel power line to the driving transistor of the subpixel. The pixel power connection pattern may include a first laser cutting area, and may be made of the same material on the same layer as the active layer of the driving transistor. ## Claims ### Claim 1 A light emitting display apparatus, comprising: a subpixel including a light emission area and a circuit area, which are disposed to be adjacent to each other in a first direction; a driving transistor provided in the circuit area of the subpixel, wherein the driving transistor includes an active layer and a gate electrode; a light emitting element provided in the light emission area of the subpixel, wherein the light emitting element includes an anode electrode, a light emitting layer and a cathode electrode; a pixel power line for supplying a pixel power source to the driving transistor of the subpixel; and a pixel power connection pattern connecting the pixel power line to the driving transistor of the subpixel, wherein the pixel power connection pattern includes a first laser cutting area and is made of a same material on a same layer as the active layer of the driving transistor. ### Claim 2 (depends on 1) The light emitting display apparatus of claim 1, wherein the pixel power connection pattern includes: a first pixel power connection pattern electrically connected to the pixel power line and extended in a second direction between the light emission area and the driving transistor; and a second pixel power connection pattern connecting the first pixel power connection pattern to the driving transistor. ### Claim 3 (depends on 2) The light emitting display apparatus of claim 2, wherein the second pixel power connection pattern includes the first laser cutting area, and is made of the same material on the same layer as the active layer of the driving transistor. ### Claim 4 (depends on 2) The light emitting display apparatus of claim 2, wherein the second pixel power connection pattern is extended from the active layer of the driving transistor and is electrically connected to the first pixel power connection pattern through a first contact hole. ### Claim 5 (depends on 2) The light emitting display apparatus of claim 2, wherein the second pixel power connection pattern does not overlap the anode electrode of the light emitting element. ### Claim 6 (depends on 2) The light emitting display apparatus of claim 2, wherein the first pixel power connection pattern is formed of the same material on the same layer as the gate electrode of the driving transistor. ### Claim 7 (depends on 1) The light emitting display apparatus of claim 1, wherein the active layer includes a first active layer and a second active layer provided on the first active layer, and the first active layer includes a semiconductor material and the second active layer includes a conductive material. ### Claim 8 (depends on 7) The light emitting display apparatus of claim 7, wherein the first active layer includes indium gallium zinc oxide (IGZO), and the second active layer includes molybdenum titanium (MoTi). ### Claim 9 (depends on 1) The light emitting display apparatus of claim 1, further comprising: a driving contact portion provided in the circuit area, wherein the driving contact portion is configured to electrically connect the anode electrode of the light emitting element to the driving transistor; and a welding contact portion provided in the circuit area, wherein the welding contact portion is configured to electrically connect an anode electrode of another light emitting element to the driving transistor by irradiating a laser, wherein the anode electrode of the another light emitting element is provided in an adjacent subpixel disposed to be adjacent to the subpixel, wherein the driving transistor is provided between the first laser cutting area and at least one of the driving contact portion or the welding contact portion. ### Claim 10 (depends on 9) The light emitting display apparatus of claim 9, wherein the driving contact portion and the welding contact portion are disposed to be adjacent to each other in a second direction. ### Claim 11 (depends on 9) The light emitting display apparatus of claim 9, further comprising: a reference line to which a reference voltage is for being applied; and a reference connection pattern connected to the reference line to transfer the reference voltage to the driving transistor of the subpixel, wherein the reference connection pattern includes a second laser cutting area and is made of the same material on the same layer as the active layer of the driving transistor. ### Claim 12 (depends on 11) The light emitting display apparatus of claim 11, wherein at least one of the driving contact portion or the welding contact portion is disposed between the second laser cutting area and the driving transistor. ### Claim 13 (depends on 11) The light emitting display apparatus of claim 11, wherein the driving contact portion includes a first connection electrode electrically connected to the driving transistor, the welding contact portion includes a second connection electrode provided on a layer different from the first connection electrode and electrically connected to the driving transistor, and the reference connection pattern is electrically connected to the active layer of the driving transistor through at least one of the first connection electrode or the second connection electrode. ### Claim 14 (depends on 9) The light emitting display apparatus of claim 9, further comprising: a data line to which a data voltage is for being applied; and a data connection pattern connected to the data line to transfer the data voltage to the driving transistor of the subpixel, wherein the data connection pattern includes a third laser cutting area and is made of the same material on the same layer as the active layer of the driving transistor. ### Claim 15 (depends on 14) The light emitting display apparatus of claim 14, wherein at least one of the driving contact portion or the welding contact portion is disposed between the third laser cutting area and the driving transistor. ### Claim 16 (depends on 14) The light emitting display apparatus of claim 14, wherein the data connection pattern is electrically connected to the gate electrode of the driving transistor at one end through a second contact hole, and is electrically connected to the data line at the other end through a third contact hole.