# US 2024/0204094 A1 · Gallium nitride component, method for manufacturing gallium nitride component, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0204094 A1 - Document ID: US20240204094A1 - Status: Published application - Kind: A1 - Application number: 18/592,325 - Filed: 2024-02-29 - Published: 2024-06-20 - Earliest claimed: 2021-08-30 - Assignees: Huawei Technologies Co., Ltd. - Applicants: Huawei Technologies Co., Ltd. - Inventors: Gaofei Tang; Daisuke Ueda; Hui Sun; Qilong Bao; Hanxing Wang - Web page: https://patentgrep.com/patent/US20240204094A1 ## CPC - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT} - H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 62/117: {Shapes of semiconductor bodies} - H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)} - H10D 64/518: {characterised by their lengths or sectional shapes} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A gallium nitride component includes a gallium nitride layer, a barrier layer on a surface of a side of the gallium nitride layer, and a gate on a side that is of the barrier layer and that is away from the gallium nitride layer. The gallium nitride layer has a gate region and a non-gate region outside the gate region. The barrier layer is located in the gate region and the non-gate region. A size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate. ## Claims ### Claim 1 A gallium nitride component, comprising: a gallium nitride layer, wherein the gallium nitride layer has a gate region and a non-gate region outside the gate region; a barrier layer, wherein the barrier layer is located on a surface of a side of the gallium nitride layer, and a constituent material of the barrier layer comprises aluminum, gallium, and nitrogen; and a gate, wherein the gate is located on a side that is of the barrier layer in the gate region and that is away from the gallium nitride layer, wherein the barrier layer is located in the gate region and the non-gate region; and in a direction perpendicular to the surface of the gallium nitride layer, a size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate. ### Claim 2 (depends on 1) The gallium nitride component according to claim 1, wherein the barrier layer comprises a first part facing the gallium nitride layer and a second part facing the gate, wherein aluminum concentration of the first part is greater than aluminum concentration of the second part, and wherein the first part is located in the gate region and the non-gate region, and a projection of the second part on the surface of the gallium nitride layer is located in the gate region. ### Claim 3 (depends on 2) The gallium nitride component according to claim 2, wherein the first part is a first film layer, the second part comprises a plurality of laminated sub-film layers, and aluminum concentration of sub-film layers facing the gate is less than aluminum concentration of sub-film layers facing the first part. ### Claim 4 (depends on 2) The gallium nitride component according to claim 2, wherein the aluminum concentration of the second part presents a descending trend from a side facing the first part to a side away from the first part. ### Claim 5 (depends on 1) The gallium nitride component according to claim 1, wherein in the direction perpendicular to the surface of the gallium nitride layer, the size of the barrier layer located in the non-gate region is less than or equal to 30 nm. ### Claim 6 (depends on 2) The gallium nitride component according to claim 2, wherein a mole ratio of aluminum to gallium in the barrier layer located in the non-gate region is greater than or equal to 3/7. ### Claim 7 (depends on 1) The gallium nitride component according to claim 1, comprising: a source and a drain, wherein the source and the drain are located on a side that is of the barrier layer in the non-gate region and that is away from the gallium nitride layer. ### Claim 8 (depends on 7) The gallium nitride component according to claim 7, wherein a material of at least one of the source, the drain, and the gate is at least one of: nickel, titanium, aluminum, palladium, platinum, gold, titanium nitride, tantalum nitride, and copper. ### Claim 9 (depends on 1) The gallium nitride component according to claim 1, comprising: a passivation layer, wherein the passivation layer covers the barrier layer located in the non-gate region. ### Claim 10 (depends on 9) The gallium nitride component according to claim 9, wherein the passivation layer covers the barrier layer located in the gate region, the gate comprises a first gate structure and a second gate structure that are electrically connected, the first gate structure penetrates the passivation layer, and the second gate structure is formed on a side that is of the first gate structure and that is away from the gallium nitride layer, and covers a part of a surface of the passivation layer. ### Claim 11 (depends on 9) The gallium nitride component according to claim 9, wherein a material of the passivation layer is at least one of silicon nitride and aluminum carbide. ### Claim 12 (depends on 1) The gallium nitride component according to claim 1, comprising: a gate dielectric layer located between the barrier layer and the gate. ### Claim 13 (depends on 1) The gallium nitride component according to claim 1, comprising: a substrate, located on a side that is of the gallium nitride layer and that is away from the barrier layer. ### Claim 14 (depends on 13) The gallium nitride component according to claim 13, comprising: a buffer layer located between the substrate and the gallium nitride layer. ### Claim 15 A method for manufacturing a gallium nitride component, comprising: forming a gallium nitride layer, wherein the gallium nitride layer has a gate region and a non-gate region outside the gate region; and forming a barrier layer on a surface of a side of the gallium nitride layer, and a gate located on a side that is of the barrier layer in the gate region and that is away from the gallium nitride layer, wherein A constituent material of the barrier layer comprise aluminum, gallium, and nitrogen, the barrier layer is located in the gate region and the non-gate region, and in a direction perpendicular to the surface of the gallium nitride layer, a size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate. ### Claim 16 (depends on 15) The method according to claim 15, wherein the barrier layer comprises a first part facing the gallium nitride layer and a second part facing the gate, aluminum concentration of the first part is greater than aluminum concentration of the second part, the first part is located in the gate region and the non-gate region, and a projection of the second part on the surface of the gallium nitride layer is located in the gate region. ### Claim 17 (depends on 16) The method according to claim 16, wherein the first part is a first film layer, the second part comprises a plurality of laminated sub-film layers, and aluminum concentration of sub-film layers facing the gate is less than aluminum concentration of sub-film layers facing the first part. ### Claim 18 (depends on 16) The method according to claim 16, wherein the aluminum concentration of the second part presents a descending trend from a side facing the first part to a side away from the first part. ### Claim 19 (depends on 15) The method according to claim 15, wherein in the direction perpendicular to the surface of the gallium nitride layer, the size of the barrier layer located in the non-gate region is less than or equal to 30 nm. ### Claim 20 An electronic device, comprising: a circuit board; and a gallium nitride component connected to the circuit board, the gallium nitride component including: a gallium nitride layer, wherein the gallium nitride layer has a gate region and a non-gate region outside the gate region; a barrier layer, wherein the barrier layer is located on a surface of a side of the gallium nitride layer, and a constituent material of the barrier layer comprises aluminum, gallium, and nitrogen; and a gate, wherein the gate is located on a side that is of the barrier layer in the gate region and that is away from the gallium nitride layer, wherein the barrier layer is located in the gate region and the non-gate region; and in a direction perpendicular to the surface of the gallium nitride layer, a size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate.